Solution Statement
This technology enables the fabrication and manufacturing of complementary metal-oxide-semiconductor (CMOS) devices by integrating promising rare-earth oxide (REO) thin-film material on a germanium (Ge) semiconductor wafer. Through integration technology of REO on Ge wafer with high band offsets and fewer interfacial defects, it can cater for the continuous demand of low power consumption and high-speed device operation, thus revealed potential improvements for replacing the current silicon (Si) based CMOS technology.